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25TH SYMPOSIUM ON PHOTONICS AND OPTICS SPO 2024

Nov 4 – 8, 2024
Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine
Europe/Zurich timezone

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Session

Radiation Detectors and Detector Materials

Nov 8, 2024, 6:55 AM
Room 103 (Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine)

Room 103

Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine

The conference will be performed in HYBRID mode: - On-site at Faculty of Physics of Trars Shevchenko National University of Kyiv - VIa ZOOM platform

Conveners

Radiation Detectors and Detector Materials

  • Kateryna Zelenska

Presentation materials

There are no materials yet.

  1. 50. Electrical characteristics of Cu-electrode CdTe detectors
    Katsuyuki Takagi (Shizuoka University, ANSeeN Inc.)
    11/8/24, 6:55 AM
    Invited Talk

    Cadmium Telluride (CdTe) is one of the excellent semiconductor detector materials. However, the long-term stability of the electrode on CdTe has been relatively understudied. CdTe detectors with Cu-electrode were fabricated to analyze stabilities of the junction between the electrode and the crystal. The fabricated detectors demonstrated excellent rectifying properties after electrical aging,...

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  2. 51. Characterization of Mesa Structure of GaN-based Radiation Detectors
    Mr Kagemitsu Inaba (Graduate School of Integrated Science and Technology, Shizuoka University)
    11/8/24, 7:15 AM
    Oral

    Semiconductor radiation detectors with high energy sensitivity are primarily being developed, but there is a demand for semiconductor detectors that can handle low energy levels of around 30 keV or less. Therefore, we propose gallium nitride (GaN) as a new semiconductor detector material, aiming for detectors useful in the low energy range of approximately 10 to 26 keV. GaN has a large...

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  3. 52. Electron Beam Doping with CdTe for Radiation Detectors.
    Yuki Shinmura (Shizuoka University)
    11/8/24, 7:25 AM
    Oral

    CdTe as a semiconductor has advantages when used as a radiation detector, such as sensitivity to high energy and the ability to operate at room temperature. However, the disadvantage is that the charge collection efficiency is lower than that of Si and Ge, and a high voltage must be applied to collect a sufficient amount of charge. Therefore, it is necessary to suppress the leakage current...

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  4. 53. Development of Compact Neutral Source using D-D Reaction
    Keigo Nakiyama (Shizuoka Univ.)
    11/8/24, 7:35 AM
    Oral

    In X-ray imaging, light elements are transmitted through light elements and scattered and absorbed by high-density metals, so the transmitted image shows the metal portions well. In contrast, neutron imaging transmits light elements such as hydrogen through metal and is scattered and absorbed by light elements such as hydrogen, so that the transmitted image shows the areas containing light...

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  5. 34. X-ray and alpha-ray detection properties of TlBr polycrystalline films
    Kouhei Toyota (Shizuoka University)
    11/8/24, 7:45 AM
    Oral

    Thallium bromide (TlBr) is a semiconductor material with a band gap of 2.68 eV. TlBr has a large atomic number (81, 35) and a high density (7.56 g/cm 3), and therefore exhibits high absorption efficiency for X-rays and gamma rays. Due to these excellent physical properties, TlBr is being researched as a suitable material for semiconductor detectors operating at room temperature. TlBr has a low...

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