Conveners
Sensor fabrication and technologies - II
- Jiaguo Zhang (PSI - Paul Scherrer Institut)
Low Gain Avalanche Diodes (LGADs) are state-of-the-art silicon sensors designed with an internal gain in the order of 10, enabling a timing resolution of about 30~ps. Over the past decade, the development of LGADs has been driven by the High-Energy Physics (HEP) community to facilitate the time tagging of minimum ionizing particles for the High-Luminosity upgrade of the Large Hadron Collider...
The Low Gain Avalanche Diode (LGAD) has emerged as a promising technology for applications in next-generation light sources. Its internal signal amplification (gain ~10) benefits small signals that can be raised above the noise imposed by the front-end electronics.
SINTEF, in collaboration with SLAC Linear Accelerator Laboratory, has developed and fabricated an inverse LGAD device...
In order to achieve a pixel diode inherent signal amplification, Low Gain Avalanche Photo Diodes LGADs have come into focus of pixel detector developments. Our novel Concept for a Monolithic Array of Reach THrough Avalanche photo diodes, addresses one of the main issues of conventional LGADs, the inhomogeneity in the gap Region between pixels. The goal is to provides a 100\% fill factor and...
Recent developments in X-ray technology have highlighted a significant gap between the advancements in X-ray facility capabilities and the corresponding limitations in detector technologies, especially in the soft X-ray energy range (200 eV to 2 keV). While hybrid pixel detectors are the standard for higher-energy X-ray applications (2–20 keV), their implementation in the soft X-ray regime...
Low-Gain Avalanche Diodes (LGADs) are typically fabricated on p-type substrates, following an n–p⁺–p junction configuration, where a boron-doped layer forms the gain region.
This architecture is considered optimal for timing and particle-tracking applications since the primary charge carriers initiating the avalanche process are electrons, which feature higher drift velocity and ionization...
Future work on the radiation-hardened semiconductor detector is core to future high-luminosity observatories and X-ray imaging systems. This study is concerned with simulation and optimization of silicon based detectors that involve TCAD tools which examines the structural and electrical performance of such detectors that under different irradiating conditions. We test charge collection...
