X-ray Sensor Joint Workshop - From Soft to Hard X-rays

Session

HiZPAD - Other High-Z sensor materials

16 Jan 2026, 13:00

ML E12 (ETH)

56. Edge-On CZT and Amorphous Selenium Detectors for High-Resolution gamma-ray and X-ray Imaging

Shiva Abbaszadeh (University of California, Santa Cruz)

16/01/2026, 13:00

This talk will present recent advances in high-Z and wide-bandgap photoconductor detectors developed at the Radiological Instrumentation Laboratory, UC Santa Cruz. I will discuss: Edge-on cadmium zinc telluride (CZT) detector architectures enabling depth-of-interaction sensing, high energy resolution, and scalability for photon-counting CT, SPECT, and Compton imaging. Thick amorphous selenium...

61. Integration of TlBr film sensor to TimePix-3 for Direct X-ray Imaging

Giovanni Pinaroli (Brookhaven National Laboratory (BNL))

16/01/2026, 13:30

Synchrotron science push to higher photon energy requires detector coupled to high-Z sensor overcoming the limitations of the traditionally used silicon detector.  Integrating these detector materials with the imaging readout circuit poses a challenge for the integration particularly for small pixel sizes and large pixel count arrays. Consequently, alternate sensor materials and methodologies...

60. Latest update on TlBr activities

Hidenori Toyokawa (Japan Synchrotron Radiation Research Institute)

16/01/2026, 14:00

Latest update on TlBr activities

62. Germanium Sensors: Progress and Present Status

Abdul Rumaiz (Brookhaven National Laboratory)

16/01/2026, 15:00

High-purity germanium (HPGe) remains the gold-standard sensor material for hard X-ray detection, offering superior energy resolution and detection efficiency. However, its widespread use is limited by the need for cryogenic cooling to suppress dark current. The NSLS-II Detector Group at Brookhaven National Laboratory has developed a series of monolithic, multi-element germanium detectors based...

63. On the performance of a Silicon ROIC with PbS QD’s deposition for direct conversion x-ray detection

Chun-Min Zhang (CSEM), Nadim Maamari (CSEM)

16/01/2026, 15:30

71. Evaluation of Different Thicknesses of Chromium Compensated Gallium Arsenide Sensors Using Photon Counting Readout Electronics

B. Wang (School of Biomedical Engineering, Shanghai, Tech University, Shanghai, China), D. Nalyvaiko (Advafab), E. Soharova (ADVACAM s.r.o.), H. Li (School of Biomedical Engineering, Shanghai, Tech University, Shanghai, China), Jan Jakubek (ADVACAM s.r.o.), Juha Kalliopuska (Advafab), N. Masuda (Advafab), P. Spisek (ADVACAM s.r.o.), Sami Vähänen (Advafab), T. Zhong (School of Biomedical Engineering, Shanghai, Tech University, Shanghai, China), V. A. Gnatyuk (Advafab), X. Lai (School of Biomedical Engineering, Shanghai, Tech University, Shanghai, China)

16/01/2026, 16:00

Gallium arsenide is extensively studied for about seven decades as an excellent material for semiconductor lasers, LEDs, and microwave electronics. GaAs has noticeable advantages over silicon and Cd(Zn)Te for radiation detectors. Particularly GaAs has higher electron mobility compared to Si and Cd(Zn)Te; higher average atomic number compared to Si; and lower probability and energy of the...