5–7 Nov 2025
Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine
Europe/Zurich timezone

Mn-Doped BaSnO₃ Perovskites for Next-Generation Optoelectronics: A First-Principles Investigation

6 Nov 2025, 14:20
15m
Room 261(Laboratory building) (Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine)

Room 261(Laboratory building)

Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine

The conference will be performed in HYBRID mode: - On-site at Faculty of Physics of Trars Shevchenko National University of Kyiv - VIa ZOOM platform

Speaker

YOUNES ELALAOUI (Faculty of Sciences Ben M’Sik, Hassan II University of Casablanca, B.P.7955, Morocco)

Description

Perovskite oxides with the general formula ABO₃ offer highly tunable physical properties through substitution at the A and B lattice sites. In this work, manganese (Mn) was introduced into BaSnO₃ to evaluate its impact on structural, electronic, and optical properties. First-principles calculations were performed using density functional theory (DFT) within the pseudopotential plane-wave (PP-PW) framework implemented in Quantum Espresso for BaSn₁₋ₓMnₓO₃ (x = 0, 12.5, 25, and 37.5%). The lattice parameter decreases linearly with Mn incorporation, from 4.10 Å in pristine BaSnO₃ to 4.03 Å at x = 37.5%. The undoped compound exhibits a direct bandgap of 2.76 eV at the Γ point, which narrows significantly to 0.82 eV at 37.5% Mn doping due to enhanced Mn–O hybridization and altered orbital contributions within the valence band. Optical calculations reveal a progressive increase in the imaginary dielectric function ε₂(ω), with static values rising from 0.07 (x = 0) to 3.21 (x = 37.5). This trend leads to marked enhancement of absorption coefficients, from 2.68 × 10⁵ to 6.23 × 10⁵ cm⁻¹ in the UV region and from 1.47 × 10⁵ to 3.8 × 10⁵ cm⁻¹ in the visible range, accompanied by a decrease in optical transmittance from ~80% to <76%. Overall, Mn doping enables precise tuning of the structural and optoelectronic response of BaSnO₃, underscoring its promise for advanced optoelectronic applications.

Type of presence Presence online

Author

YOUNES ELALAOUI (Faculty of Sciences Ben M’Sik, Hassan II University of Casablanca, B.P.7955, Morocco)

Co-author

Prof. Rhma Adhiri (Faculty of Sciences Ben M’Sik, Hassan II University of Casablanca, B.P.7955, Morocco)

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