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Description
Anisotropic epitaxial growth of free-standing InGaN nanostructures remains a key technological challenge in light-emitting device development. Here, we report precise, stepwise control of InGaN nanostructure growth on Si(111) substrates using molecular beam epitaxy (MBE). Light nitridation of the Si(111) surface created nucleation centers that promoted the well-oriented formation of hexagonal InGaN structures. Under nitrogen-rich conditions with a III/V flux ratio of 1.2, high indium incorporation up to 68% was achieved. This approach enabled the self-assembly of InGaN nanotowers with a distinctive ‘lotus seed pod’ morphology, reaching heights of up to 650 nm. Growth kinetics were monitored at each stage via reflection high-energy electron diffraction (RHEED), ensuring precise control over structure formation. Photoluminescence measurements at room temperature revealed a pronounced red emission peak at 705 nm, demonstrating the optical quality and potential applicability of these structures. The combination of controlled morphology, high indium incorporation, and efficient red emission indicates that self-assembled InGaN ‘lotus seed pod’ nanostructures are promising candidates for next-generation light-emitting devices.
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