26TH SYMPOSIUM ON PHOTONICS AND OPTICS SPO 2025

PHOTOELECTRIC PROPERTIES OF VERTICAL CIGS/CdS HETEROSTRUCTURES

Not scheduled

5m

Room 261(Laboratory building) (Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine)

Poster

Speakers

Dr Alexei Nazarov (Lashkaryov Institute of Semiconductor Physics (ISP), NAS of Ukraine)Ms Maria Kasianchuk (Taras Shevchenko National University of Kyiv)Dr Oleksandr Datsenko (Taras Shevchenko National University of Kyiv)Prof. Serhii Kondratenko (Taras Shevchenko National University of Kyiv)

Description

Photosensitive properties of heterostructures based on CuInGaSe2 (CIGS) for solar cells were studied. Vertical structures Mo/CIGS/CdS with Indium Tin Oxide (ITO) as a transparent top electrode were grown on glass substrates. Raman spectroscopy manifested modes typical for CIGS within 170-270 cm–1. The photovoltage spectroscopy revealed CIGS as anode and CdS as cathode. The heterostructure was found to be photosensitive with the onset ~ 1.0 eV and allowed to estimate the optical bandgap of the CIGS film about 1.10 eV at room temperature and 1.12 eV at 80 K. The barrier height for charge carriers was estimated from capacitance-voltage profile to be about 0.65 eV. The current-voltage characteristic was found to be varistor-like, maybe due to an opposite barrier at the CdS/ITO interface.
This work was supported by National Research Foundation of Ukraine (2023.03/0060).