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Photosensitive properties of heterostructures based on CuInGaSe$_2$ (CIGS) for solar cells were studied. Vertical structures $\mathrm{Mo}/\mathrm{CIGS}/\mathrm{CdS}$ with indium tin oxide (ITO) as a transparent top electrode were grown on glass substrates. Raman spectroscopy manifested modes typical for CIGS within $170$–$270~\mathrm{cm}^{-1}$. The photovoltage spectroscopy revealed CIGS as the anode and CdS as the cathode. The heterostructure was found to be photosensitive with the onset at $\sim 1.0~\mathrm{eV}$ and allowed us to estimate the optical bandgap of the CIGS film about 1.10eV at room temperature and 1.12eV at $80~\mathrm{K}$. The barrier height for charge carriers, estimated from the capacitance–voltage profile is about 0.65 eV. The current–voltage characteristic is varistor-like, possibly due to an opposite barrier at the $\mathrm{CdS}/\mathrm{ITO}$ interface.
This work was supported by the National Research Foundation of Ukraine (2023.03/0060).
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