Conveners
Workshop on Laser processing of materials for advanced optoelectronic applications
- Danylo Babich (PSI - Paul Scherrer Institut)
A large number of modern micro- and optoelectronic devices and advanced sensor technologies does not require fabrication tools with ultimate resolution like a currently commercialized 2 nm technology of silicon-based chips. These are, for example, stand-alone microsensors or MEMS, for which a low price is preferred, while there is no need for close packing or miniaturization below m-scale....
Ultrashort laser pulses enable precise material processing with exceptional spatial and temporal confinement. Because the pulse duration is shorter than the electron–phonon relaxation time, the material experiences minimal or no heat-affected zone. This phenomenon underpins most of the laser–matter interaction research conducted at the FTMC Laser Microfabrication Laboratory. Our activities...
GeSn alloys are promising for CMOS-compatible photonics and electronics, offering band‐gap engineering from SWIR to MWIR, on-chip light sources/detectors, and strain-tunable high-mobility channels. Yet, pushing Sn content high enough for direct-gap behavior remains difficult due to low Sn solubility in Ge, growth-induced compressive strain, defect generation, and a tendency to segregate or...
To form CMOS compatible graphene device the graphene oxide reduced by CW laser (455 nm) on SiO2/Si wafer was used. The graphene oxide water solution was deposited on SiO2/Si structure by drop casting method with following heating at 50°C for 1 hour. For reduction of the GrO film the laser power from 0.100 W to 0.800 W was employed, as in air and in nitrogen atmosphere. The part of samples was...
Ge1-xSnx alloys are promising CMOS-compatible materials for developing effective light absorbers and emitters integrated into Si opto- and nanoelectronics. Critical to this application is the transition from an indirect- to a direct-gap semiconductor, which is experimentally observed when the Sn content is in the 6–10 % range. The wide variation in Sn values is due to the sensitivity of the...
The efficient detection of terahertz (THz) waves remains a critical challenge, despite the vast potential of the THz spectrum. We present a method to significantly enhance the sensitivity of THz detectors featuring a metallic antenna on a conducting film with a dielectric substrate. The study utilizes mercury-cadmium-telluride (HgCdTe), a proven semiconductor for infrared detection, extending...
Amorphous arsenic chalcogenides are semiconductor materials known for numerous photoinduced effects under illumination by light of appropriate energy and intensity which makes them promising for various applications. We present a study of photoinduced formation of semiconductor nanocrystals in amorphous As–S(Se) films doped with metal atoms. The doped As2S3 and As2Se3 films with desired dopant...
