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26TH SYMPOSIUM ON PHOTONICS AND OPTICS SPO 2025

5–7 Nov 2025
Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine
Europe/Zurich timezone

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Session

Workshop on Laser processing of materials for advanced optoelectronic applications

6 Nov 2025, 09:00
Room 261(Laboratory building) (Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine)

Room 261(Laboratory building)

Zoom and Faculty of Physics, Taras Shevchenko National University of Kyiv, Kyiv, Ukraine

The conference will be performed in HYBRID mode: - On-site at Faculty of Physics of Trars Shevchenko National University of Kyiv - VIa ZOOM platform

Conveners

Workshop on Laser processing of materials for advanced optoelectronic applications

  • Danylo Babich (PSI - Paul Scherrer Institut)

Presentation materials

There are no materials yet.

  1. 180. Direct optical lithography and scanning laser processing of materials for advanced optoelectronic applications
    Prof. Volodymyr Dzhagan
    06/11/2025, 09:00
    Laser processing of materials for advanced optoelectronic applications
    Invited Talk

    A large number of modern micro- and optoelectronic devices and advanced sensor technologies does not require fabrication tools with ultimate resolution like a currently commercialized 2 nm technology of silicon-based chips. These are, for example, stand-alone microsensors or MEMS, for which a low price is preferred, while there is no need for close packing or miniaturization below m-scale....

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  2. 188. Ultrashort Pulse Laser Microfabrication Technologies at FTMC
    Dr Andrius Žemaitis (Center for Physical Sciences and Technology (FTMC), Vilnius, Lithuania)
    06/11/2025, 09:30
    Laser processing of materials for advanced optoelectronic applications
    Invited Talk

    Ultrashort laser pulses enable precise material processing with exceptional spatial and temporal confinement. Because the pulse duration is shorter than the electron–phonon relaxation time, the material experiences minimal or no heat-affected zone. This phenomenon underpins most of the laser–matter interaction research conducted at the FTMC Laser Microfabrication Laboratory. Our activities...

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  3. 167. Single-Pulse Nanosecond Laser Patterning of Nanoscale Electronic–Structural Landscapes in GeSn
    Dr Petro Lytvyn (V. Lashkaryov Institute of Semiconductor Physics NAS Ukraine, Kyiv, Ukraine)
    06/11/2025, 09:45
    Laser processing of materials for advanced optoelectronic applications
    Oral

    GeSn alloys are promising for CMOS-compatible photonics and electronics, offering band‐gap engineering from SWIR to MWIR, on-chip light sources/detectors, and strain-tunable high-mobility channels. Yet, pushing Sn content high enough for direct-gap behavior remains difficult due to low Sn solubility in Ge, growth-induced compressive strain, defect generation, and a tendency to segregate or...

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  4. 165. Laser reduction of Graphene Oxide films on SiO2-Si structures
    Prof. Alexei N. Nazarov (Lashkaryov Institute of Semicnductor Physics NAS of Ukraine)
    06/11/2025, 10:00
    Laser processing of materials for advanced optoelectronic applications
    Oral

    To form CMOS compatible graphene device the graphene oxide reduced by CW laser (455 nm) on SiO2/Si wafer was used. The graphene oxide water solution was deposited on SiO2/Si structure by drop casting method with following heating at 50°C for 1 hour. For reduction of the GrO film the laser power from 0.100 W to 0.800 W was employed, as in air and in nitrogen atmosphere. The part of samples was...

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  5. 163. Formation and Properties of GeSn and GeSn:C Films
    Prof. Volodymyr Yukhymchuk (V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine)
    06/11/2025, 10:15
    Laser processing of materials for advanced optoelectronic applications
    Oral

    Ge1-xSnx alloys are promising CMOS-compatible materials for developing effective light absorbers and emitters integrated into Si opto- and nanoelectronics. Critical to this application is the transition from an indirect- to a direct-gap semiconductor, which is experimentally observed when the Sn content is in the 6–10 % range. The wide variation in Sn values is due to the sensitivity of the...

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  6. 156. Fabry–Pérot Enhanced THz Sensitivity of Antenna-Coupled HgCdTe Detectors
    Prof. Zinoviia Tsybrii (V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine)
    06/11/2025, 10:30
    Laser processing of materials for advanced optoelectronic applications
    Oral

    The efficient detection of terahertz (THz) waves remains a critical challenge, despite the vast potential of the THz spectrum. We present a method to significantly enhance the sensitivity of THz detectors featuring a metallic antenna on a conducting film with a dielectric substrate. The study utilizes mercury-cadmium-telluride (HgCdTe), a proven semiconductor for infrared detection, extending...

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  7. 164. Photoinduced formation of semiconductor nanocrystals in amorphous arsenic chalcogenides
    Dr Yuriy Azhniuk (Institute of Electron Physics, Nat. Acad. Sci. Ukr., Uzhhorod, Ukraine)
    06/11/2025, 10:45
    Laser processing of materials for advanced optoelectronic applications
    Oral

    Amorphous arsenic chalcogenides are semiconductor materials known for numerous photoinduced effects under illumination by light of appropriate energy and intensity which makes them promising for various applications. We present a study of photoinduced formation of semiconductor nanocrystals in amorphous As–S(Se) films doped with metal atoms. The doped As2S3 and As2Se3 films with desired dopant...

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