Spin Hall Magnetoresistance at the Altermagnetic Insulator/Pt Interface
by
OVGA/200
M. Leiviskä1, R. Firouzmandi2, K. Ahn1, P. Kubaščik3, Z. Soban1, S. Bommanaboyena1,
C. Müller1, D. Kriegner1, D. Reustlen4, S. Sailler4, M. Lammel4, K. Bestha2,5, M. Hyvl1, L. Šmejkal6,7,1, J. Zelezny1, A. U. B. Wolter2, M. Scheufele8,9, J. Fischer10, M. Opel8,
S. Geprägs8, M. Althammer8, B. Büchner2,11,12, T. Jungwirth1,13, L. Nádvorník3,
S. T. B. Goennenwein4, V. Kocsis2, and H. Reichlova1
1Institute of Physics, Czech Academy of Sciences, Czechia
2Institut für Festkörperforschung, Leibniz IFW Dresden, Germany
3Faculty of Mathematics and Physics, Charles University, Czechia
4Department of Physics, University of Konstanz, Germany
5Institute of Solid State and Materials Physics, TU Dresden, Germany
6Max Planck Institute for the Physics of Complex Systems, Germany
7Max Planck Institute for Chemical Physics of Solids, Germany
8Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Germany
9Technical University of Munich, TUM School of Natural Sciences, Germany
10Universite Grenoble Alpes, CEA, CNRS, Spintec, France
11Institute of Solid State and Materials Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, Germany
12Center for Transport and Devices, Technische Universität Dresden, Germany
13School of Physics and Astronomy, University of Nottingham, UK
Spin Hall magnetoresistance (SMR) is a magnetoresistive effect present in bilayers comprising of a magnet (here insulating) and a heavy metal [1]. It relies on the concerted action of spin Hall effect, inverse spin Hall effect, and dissipation of spin accumulation at the interface. The dissipation of the spin accumulation occurs via various channels, including spin-transfer torque and magnon-mediated spin current transfer. Altermagnets are a new class of collinear compensated magnets with a unique anisotropic spin ordering with characteristic spin-degenerate nodes and alternating even-parity spin polarization that breaks the time-reversal symmetry [2]. In this work, we present a set of SMR measurements in heterostructures of Pt and an insulating and ferroelectric altermagnet candidates Ba2CoGe2O7 [3] and Sr2CoSi2O7. We will first detail the fabrication of devices for SMR experiments on bulk crystals and then discuss characteristic SMR features of the systems under study. We show that in both systems the SMR ratio is unexpectedly large and shows anisotropy depending on in which crystal direction the current is applied. We systematically rule out device-to-device variations, magnetic domains, and magnetocrystalline anisotropy as the main origin of this current-direction anisotropy of the SMR ratio, and also address the possible effects of ferroelectric polarization on the SMR. Finally, we will suggest mechanisms through which the crystal symmetries that characterize the altermagnetic phase of Ba2CoGe2O7 and Sr2CoSi2O7 could give rise to the observed anisotropy.
References
[1] H. Nakayama, M. Althammer, Y.-T. Chen, et al. Phys. Rev. Lett. 110, 206601 (2013).
[2] L. Šmejkal, J. Sinova, and T. Jungwirth. Phys. Rev. X 12, 031042 (2022).
[3] M. Leiviskä, R. Firouzmandi, K. Ahn et al. Phys. Rev. Mat. 9, 084403 (2025)
Laboratory for Materials Simulations (LMS)