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SUMMARY:En route to ferroelectric field effect transistors: low energy bey
 ond-CMOS computing paradigms
DTSTART:20261020T080000Z
DTEND:20261020T090000Z
DTSTAMP:20261013T164600Z
UID:indico-event-19424@indico.psi.ch
CONTACT:zaher.salman@psi.ch
DESCRIPTION:Speakers: Nikita Shepelin (PSI - Paul Scherrer Institut)\n\nPe
 rovskite materials are an excellent model system to study functional prope
 rties and processes. More importantly\, a wide gamut of functional propert
 ies can be observed in this class of materials\, governed by the chemical 
 composition\, spanning the range of insulators\, semiconductors\, ionic co
 nductors\, metals and magnets\, among others. As crystals\, these material
  classes can be combined into heterostructures using thin film techniques 
 to unlock new functionalities leading to the next generation of electrical
  and electronic devices. By employing pulsed laser deposition\, the chemis
 try of each material can be finely tuned\, which can drastically alter the
  properties of the resultant material and heterostructure. In the Physical
  Properties of Materials Group in LMX\, we explore the chemistry-structure
 -function relationships in perovskites\, with a particular focus on oxides
 . Herein\, the recent progress on ferroelectric\, semiconducting and metal
 lic materials will be discussed in the scope of computing applications. Th
 e crucial role stoichiometry plays in the final properties of a material\,
  both in the film bulk and at the interfaces\, will be described. Finally\
 , the latest advancements in epitaxy within LMX will be outlined\, with th
 e goal of promoting interlaboratory collaborative efforts on materials dis
 covery.\n\nhttps://indico.psi.ch/event/19424/
LOCATION:SZ-WBGB/019
URL:https://indico.psi.ch/event/19424/
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