6–8 Aug 2025
PSI
Europe/Zurich timezone

Fabrication and Application: In-situ monitoring system for anti-relaxation coating atomic vapor cells

7 Aug 2025, 12:00
20m
WHGA/001 - Auditorium (PSI)

WHGA/001 - Auditorium

PSI

Oral presentation OPM Development II

Speaker

Wentian Xiang (Peking University)

Description

Anti-relaxation coating (ARC) vapor cells are a critical component in atomic physics and quantum sensing, yet their widespread adoption is hindered by short spin coherence times and low manufacturing yields, stemming from the lack of systematic preparation protocols. Herein, we present an in-situ monitoring system that enables real-time optimization of the spin coherence time and vapor density during the ARC vapor cell preparation. By integrating real-time process monitoring and closed-loop feedback control into the empirical cell-curing method, our system dynamically adjusts the curing parameters to optimize the spin coherence time to second-scale. The proposed system improves the manufacturing yield of ARC vapor cells and provides a foundational platform for the advancement of quantum sensors.

(a) Schematic of the experimental device. (b) The structure of the oven. (c) Characterization indices of vapor cells manufactured with three methods. The $T_1$ and $n$ of three batches of vapor cells are marked in blue, green and red, which is uncured, empirical cured and in-situ cured, respectively. The black dotted line is the requirement curve, presenting the constant product of $T_1$ and $n$, corresponding to limit of $\delta B_{\text{SNL}}$ of femtotesla level.

(a) Schematic of the experimental device. (b) The structure of the oven. (c) Characterization indices of vapor cells manufactured with three methods. The $T_1$ and $n$ of three batches of vapor cells are marked in blue, green and red, which is uncured, empirical cured and in-situ cured, respectively. The black dotted line is the requirement curve, presenting the constant product of $T_1$ and $n$, corresponding to limit of $\delta B_{\text{SNL}}$ of femtotesla level.

Author

Wentian Xiang (Peking University)

Co-authors

Dr Shuyuan Chen (Peking University) Mr Xingqing Jin (Peking University) Prof. Wei Xiao (Peking University) Prof. Xiang Peng (Peking University) Prof. Hong Guo (Peking University)

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