Speaker
Description
The Low Gain Avalanche Diode (LGAD) has emerged as a promising technology for applications in next-generation light sources. Its internal signal amplification (gain ~10) benefits small signals that can be raised above the noise imposed by the front-end electronics.
SINTEF, in collaboration with SLAC Linear Accelerator Laboratory, has developed and fabricated an inverse LGAD device tailored for soft X-ray detection. The device is fabricated on an n-type bulk, featuring a gain structure with a shallow entrance window on one side of the substrate and the readout electrodes on the opposite side. This configuration allows fine segmentation with 100% fill factor and enables shallowly generated electrons to undergo charge multiplication as they traverse the gain layer. Preliminary tests have demonstrated a gain of 7.
In this talk, we will present the development, design, fabrication, and characterisation of this new LGAD technology.