Speaker
Description
The nominal cut-off frequency of a semiconductor transistor does not necessarily mark the end of its potential for radio-frequency and terahertz applications. This talk explores the physics, development, and performance of antenna-coupled field-effect transistor detectors (TeraFETs) fabricated in CMOS technology, highlighting how nonlinear effects enable detection far beyond conventional transistor operating limits. Key aspects include the operating principles of TeraFETs, sensitivity limits across different semiconductor technologies, and the challenges of predicting device performance at frequencies above 2 THz. Examples of demonstrated applications in terahertz imaging, broadband and selective spectroscopy, gas sensing, and passive room-temperature detection will be presented. The talk will conclude with an outlook on the remaining scientific challenges and the potential of FET-based technologies for future terahertz sensing systems.
| Type of presence | Presence online |
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