2–6 Nov 2026
Online (Zoom)
Europe/Kyiv timezone

Frustrated total internal reflection (Otto geometry) in a ZnO/6H-SiC structure: coupling through an air gap, a simulation study

Fr4.6
6 Nov 2026, 15:05
4m
Online (Zoom)

Online (Zoom)

Poster Optics and High Technology Material Science Rapid Poster Sessions

Speaker

Mr Oleksii Sakhniuk (Nizhyn Mykola Gogol State University, Nizhyn, Ukraine)

Description

Attenuated total reflection (ATR) is a convenient way to probe thin films of wide-bandgap semiconductors in the far infrared. For the ZnO/6H-SiC system, whose reststrahlen bands lie at about 378–590 and 788–970 $\mathrm{cm}^{-1}$, the prism, incidence angle and air gap determine which bands can be excited. We simulate the Otto configuration (prism / air gap / ZnO film / 6H-SiC substrate), where the evanescent wave couples to the film-substrate structure.

Both crystals are treated as uniaxial media with the optic axis normal to the surface. The ordinary ($\varepsilon_{\perp}$) and extraordinary ($\varepsilon_{\parallel}$) permittivities are described separately by a Lorentz phonon oscillator plus a Drude free-carrier term. Reflectance for s and p polarization is computed using one multilayer characteristic-matrix (Abelès) algorithm covering external reflection and ATR; for a single film it reproduces the Airy formula to about $10^{-15}$. Calculations use a 0.8 $\mu\mathrm{m}$ film (carrier density $10^{18}$ $\mathrm{cm}^{-3}$, mobility 50 $\mathrm{cm}^{2}/(\mathrm{V}\,\mathrm{s})$) on a substrate ($10^{17}$ $\mathrm{cm}^{-3}$, 100 $\mathrm{cm}^{2}/(\mathrm{V}\,\mathrm{s})$), a uniform plane-parallel gap and a frequency-independent prism index. Unless stated otherwise, the prism is KRS-5 ($n=2.37$) and the internal incidence angle is $\theta=35^{\circ}$.

The critical angle $\theta_c=\arcsin(1/n)$ is $25.0^{\circ}$ for KRS-5, $17.1^{\circ}$ for Si and $14.5^{\circ}$ for Ge. Ge transmits only above about 780 $\mathrm{cm}^{-1}$, making the ZnO band inaccessible, whereas KRS-5 (cutoff about 250 $\mathrm{cm}^{-1}$) covers both bands. For p polarization, clear reflectance minima appear at about 510–555 $\mathrm{cm}^{-1}$ (ZnO) and 830–880 $\mathrm{cm}^{-1}$ (6H-SiC). For s polarization, ZnO-band reflectance stays above 43% for all gaps considered, so p polarization is required.

The ZnO-band minimum depth depends non-monotonically on gap thickness $d_{\mathrm{gap}}$: $R_{\min}$ is about 19% at 0.5 $\mu\mathrm{m}$, 5.7% at 1 $\mu\mathrm{m}$, 0.1% at 1.5 $\mu\mathrm{m}$, 3.5% at 2 $\mu\mathrm{m}$, 74% at 5 $\mu\mathrm{m}$ and 99% at 10 $\mu\mathrm{m}$. The minimum shifts from 511 to 554 $\mathrm{cm}^{-1}$ as the gap grows from 0.5 to 5 $\mu\mathrm{m}$. For a 2 $\mu\mathrm{m}$ gap, $R_{\min}$ is about 8.9% at $28^{\circ}$, 2.8% at $30^{\circ}$, 3.5% at $35^{\circ}$, 23% at $40^{\circ}$ and 74% at $55^{\circ}$. Useful angles thus extend from a few degrees to about $10^{\circ}$ above $\theta_c$.

The minima are associated with surface and guided phonon-polariton modes. Practical starting conditions are a KRS-5 prism, p polarization, a 1.5–2 $\mu\mathrm{m}$ gap and a $30$–$35^{\circ}$ angle. Calculated spectra will be compared with measured ATR spectra, and the inverse problem for film thickness, carrier density and mobility will be solved using the same model.

Type of presence Presence online

Author

Mr Oleksii Sakhniuk (Nizhyn Mykola Gogol State University, Nizhyn, Ukraine)

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