Speaker
Arlensiu CELIS
(MaMaSELF)
Description
Epitaxial graphene on silicon carbide is a promising candidate for industry as it is grown on top of a technological substrate. Graphene ribbons are interesting for circuitry but when obtained by electronic litography their edges are rough and their transport properties are polluted by disorder-related problems. High quality ribbons are obtained by combining lithography and an annealing procedure, and it is possible to settle metal-semiconductor-metal junctions on a continuous substrate of graphene. Here are studied the atomic and electronic structure of nanoribbons by Photoemission (ARPES) and Microscopy/Spectroscopy (STM, STS, STEM).
Primary author
Arlensiu CELIS
(MaMaSELF)
