3–7 Jul 2011
ETH Zurich, Switzerland
Europe/Zurich timezone

Noise analysis of CMOS readout circuits

5 Jul 2011, 10:14
1m
HG E7 (ETH Zurich, Switzerland)

HG E7

ETH Zurich, Switzerland

www.ethz.ch www.psi.ch
Poster presentation Front-end Electronics and Readout Poster Mini Talks IV

Speaker

Mr IN-IL JUNG (CHUNG-ANG UNIVERSITY)

Description

Equivalent noise charge (ENC) is useful method for indicating total noise of detection system [1]. Here, the quantity of ENC depends on aspect ratio of a transistor which places on the input of the preamplifier. Analyzed ENC is use to minimize system noise in designing CMOS readout circuits in the gamma-ray detection system. The analysis in [1] is quietly effective to design CMOS readout circuits, however, the overdrive voltage and the bias current of the input transistor of preamplifier is missed. Theses parameters are important to satisfy saturation condition of the readout circuits and also important to achieve a linearity of readout circuit. As discussing these parameters and analyzing the influence of them, we propose the more effective method of designing readout circuits. In addition, we suggest the need of suppressing flicker noise by showing the difference of noise analysis between 0.35 μm and 0.18 μm CMOS technology. * corresponding author e-mail: ychoi@cau.ac.kr References 1. Arturo TAURO, C.Marzoccar. “A CMOS 0.35μm Analog Front-End Electronics for Gamma Ray Medical Imaging”, POLITECNICO DI, 2006

Primary authors

Mr IN-IL JUNG (CHUNG-ANG UNIVERSITY) Prof. YOUNG-WAN CHOI (CHUNG-ANG UNIVERSITY)

Presentation materials