Speaker
Mr
David Krapohl
(Department of Information Technology and Media, Mid Sweden University)
Description
Neutron radiation cannot be directly detected in semiconductor detectors and therefore need converter layers. Standard clean-room processes can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron converter layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about 19.9%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and run the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process.
Primary author
Mr
David Krapohl
(Department of Information Technology and Media, Mid Sweden University)
Co-authors
Dr
Göran Thungström
(Department of Information Technology and Media, Mid Sweden University)
Prof.
Hans-Erik Nilsson
(Department of Information Technology and Media, Mid Sweden University)
Dr
Stanislav Pospisil
(IEAP CTU in Prague)
Prof.
Sture Petersson
(IEAP CTU Prague/KTH/Mid Sweden University)
Mr
Tomas Slavicek
(IEAP CTU in Prague)
