Speaker
Mr
Vit Sopko
(IEAP CTU in Prague)
Description
This paper presents a measurement of defects in the silicon detector; which is made of high resistivity N type material. The Si detector was exposed in a nuclear reactor to neutron flux and as identification method for created defects in Si detector was applied thermally stimulated current (TSC) measurement. In our case we use a modified method of TSC for a diode with zero bias voltage in the reverse direction. For filling the traps with photoelectric effect is used LED diode with the blue light spectrum. The detector was irradiated with a total dose 1.86.1015 cm-2 of neutrons. Our results were compared with already published data. We made comparison of the TSC measurement after irradiation and after annealing (3-hours) at the temperature of 100°C shows the separation of defects on each of the disorders.
Primary author
Mr
Vit Sopko
(IEAP CTU in Prague)
Co-authors
Prof.
Bruno Sopko
(FME CTU in Prague)
Mr
Dominik Chren
(FME CTU in Prague)
