3–7 Jul 2011
ETH Zurich, Switzerland
Europe/Zurich timezone

TSC Measurement of Energetic Levels in Silicon Detector Damaged by Neutrons

4 Jul 2011, 12:45
1m
HG E7 (ETH Zurich, Switzerland)

HG E7

ETH Zurich, Switzerland

www.ethz.ch www.psi.ch
Poster presentation Sensor Materials, Device Processing & Technologies Poster MiniTalks I

Speaker

Mr Vit Sopko (IEAP CTU in Prague)

Description

This paper presents a measurement of defects in the silicon detector; which is made of high resistivity N type material. The Si detector was exposed in a nuclear reactor to neutron flux and as identification method for created defects in Si detector was applied thermally stimulated current (TSC) measurement. In our case we use a modified method of TSC for a diode with zero bias voltage in the reverse direction. For filling the traps with photoelectric effect is used LED diode with the blue light spectrum. The detector was irradiated with a total dose 1.86.1015 cm-2 of neutrons. Our results were compared with already published data. We made comparison of the TSC measurement after irradiation and after annealing (3-hours) at the temperature of 100°C shows the separation of defects on each of the disorders.

Primary author

Mr Vit Sopko (IEAP CTU in Prague)

Co-authors

Prof. Bruno Sopko (FME CTU in Prague) Mr Dominik Chren (FME CTU in Prague)

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