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International Workshop on Radiation Imaging Detectors iWoRID 2011

3–7 Jul 2011
ETH Zurich, Switzerland
Europe/Zurich timezone

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Session

Sensor Materials, Device Processing & Technologies II

SEN
4 Jul 2011, 16:25
HG E7 (ETH Zurich, Switzerland)

HG E7

ETH Zurich, Switzerland

www.ethz.ch www.psi.ch

Conveners

Sensor Materials, Device Processing & Technologies II: 2 contributions

  • Val O'Shea (University of Glasgow)

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  1. 9. Wafer Level 3D Integration Technologies
    Thomas Fritzsch (IZM Dept. High Density Interconnect & Wafer Level Packaging)
    04/07/2011, 16:25
    Oral presentation
    Wafer level packaging processes has been used over several years in hybrid pixel module manufacturing. Deposition processes like electroplating, sputtering as well as evaporation are well established technologies for the formation of interconnection structures on readout chip wafers as well as on sensor wafers. Following the packaging roadmaps to higher integration, increased functionality...
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  2. 126. Cadmium Telluride pixel sensor development for high sensibility X-ray imaging device
    Dr Hidenori Toyokawa (Japan Synchrotron Radiation Research Institute)
    04/07/2011, 17:00
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    Single X-ray photon counting pixel detector was expected to be a next generation 2D X-ray detector from the early stage of the third generation synchrotron radiation facilities. In fact, silicon-based hybrid pixel detectors such as PILATUS became commercially practical. To improve the detection sensibility in the high energy X-ray region, cadmium telluride (CdTe) is regarded as a promising...
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  3. 120. CdTe Medipix2 and Medipix3 Pixel Detectors: Material Characterization, Technology and Device Performance
    Dr Michael Fiederle (Freiburger Materialforschungszentrum FMF)
    04/07/2011, 17:20
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    The development of pixel detector arrays for different types of applications requires sensors with high efficiency and high homogeneity. The efficiency is strongly depending on the absorption of the detector material. High-Z semiconductors like CdTe-based materials are the most promising ones. The recent progress of CdTe crystals and the availability of interconnection technology open the...
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