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International Workshop on Radiation Imaging Detectors iWoRID 2011

3–7 Jul 2011
ETH Zurich, Switzerland
Europe/Zurich timezone

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Session

Sensor Materials, Device Processing & Technologies I

SEN
4 Jul 2011, 10:35
HG E7 (ETH Zurich, Switzerland)

HG E7

ETH Zurich, Switzerland

www.ethz.ch www.psi.ch

Conveners

Sensor Materials, Device Processing & Technologies I: 4 contributions

  • Cinzia Da Via (The University of Manchester)

Presentation materials

There are no materials yet.

  1. 94. State of the art neutron detection, 3He problem and solutions
    Dr Karl Zeitelhack (TU München, Forschungs-Neutronenquelle Heinz Maier-Leibnitz)
    04/07/2011, 10:35
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    Over the last years 3He has been widely used in gas filled detectors for neutron scattering due to its outstanding characteristics. Driven by the escalating supply shortage of 3He an International Detector Initiative to develop alternative technologies to 3He detectors for neutron scattering applications was initiated by the major neutron facilities worldwide. Focused on the development of...
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  2. 145. Edgeless planar semiconductor sensors for a Medipix3-based digital radiography detector
    Mr Marten Bosma (Nikhef)
    04/07/2011, 11:10
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    Due to its advanced pixel circuitry, the Medipix3 chip is an interesting read-out alternative to today’s CCD- and TFT-based digital radiography detectors. Hybridised to a mono-crystalline high-Z semiconductor sensor, it can provide electronic-noise free and fine-grained colour X-ray images of high contrast. Nevertheless, the limited active area of the Medipix3 chip as well as single-crystal...
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  3. 115. Recent Results of VTT's Edgeless Detector Prototypes
    Xiaopeng Wu (VTT)
    04/07/2011, 11:30
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    During past five years VTT has actively developed edgeless detector fabrication process. Our straightforward and high yield process relies on ion-implantation to active the edges of the detector. The presentation covers latest edgeless pixel detector prototype results from CERN’s SPS beam test and X-ray response characterization. In these evaluations 150 um thick n-on-n edgeless detectors have...
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  4. 206. Slim edges in double-sided silicon 3D detectors
    Mr Marco Povoli (Università di Trento and INFN Trento, Via Sommarive, 14, 38123 Trento, Italy)
    04/07/2011, 11:50
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    Owing to several advantages provided by their peculiar structure, where the electrode distance is decoupled from the active thickness, silicon 3D detectors are emerging as one of the most promising technologies for future experiments at high luminosity particle colliders. An additional feature available with the original 3D technology is the active edge, enabling to reduce the insensitive edge...
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  5. 163. Methods for the characterization of the long-term behaviour of X-ray detectors
    Mr Stefan Reisinger (Fraunhofer Institut)
    04/07/2011, 12:10
    Sensor Materials, Device Processing & Technologies
    Oral presentation
    Computed tomography (CT) is a non-destructive imaging method that is able to visualize the entire test specimen including inner structures. Its image quality depends on the accuracy of the system components, especially the X-ray detector, X-ray source and the manipulation system. Only the knowledge of characteristics of the components and their influence on image quality allows conclusions...
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