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β-Ga2O3 thin films have gained significant research interest due to their wide bandgap, high thermal stability, and high breakdown voltage, making them suitable for e.g. UV photodetectors. In this work, undoped and Sn-doped β-Ga2O3 thin films were deposited on c-plane sapphire substrates via ultrasonic spray pyrolysis extending our previous studies based on conventional spray coating. The use of a different deposition system, together with the introduction of Sn doping, provides a basis for investigating the influence of deposition conditions and dopant incorporation on film properties. The deposition was performed with Ga(NO3)3 dissolved a 1 : 1 water-ethanol mixture at a substrate temperature of 190 °C and post-deposition annealing was performed at 1000 °C. The films were characterized by Raman spectroscopy, atomic force microscopy, X-ray diffraction, and optical transmittance.
The stoichiometric β-phase Ga2O3 films revealed a preferred (-201) orientation in agreement with previous results [1]. The samples show transparency of up to 85% in the visible range with absorption edge at ~250 nm. The results obtained reveal that ultrasonic spray pyrolysis allows the fabrication of polycrystalline and transparent β-Ga2O3 films suitable for further studies of ohmic contact formation and for applications in solar-blind UV photodetectors.
[1] Housei Akazawa, Vacuum, 2016, 123: 8-16.
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